Researchers engineer ultra-thin 2D layers in perovskite solar cells, cutting buried interface defects by 90% and boosting ...
Abstract: The high and low frequency (Hi-Lo) CISS-VG method is carried out to analyze defect charge movement at the gate-oxide interface. The method distinguishes the impact of fast and slow traps on ...
Abstract: The evolution states of Si-SiO2 interface traps have been attracting much attention, but there are few reports on the recombination enhanced defect reaction (REDR) effect at interface traps.
UNSW researchers developed an experimentally validated model linking UV-induced degradation in TOPCon solar cells to hydrogen transport, charge trapping, and permanent structural changes in the ...
Chinese solar module producer JinkoSolar said it has achieved a 34.76% power conversion efficiency for a perovskite-silicon tandem solar cell based on TOPCon n-type wafers. The company said the ...
Article Views are the COUNTER-compliant sum of full text article downloads since November 2008 (both PDF and HTML) across all institutions and individuals. These metrics are regularly updated to ...
Redundancy in chiplet interfaces is now a prerequisite for achieving sufficient yield in high-performance computing devices, which today are packed with tens of thousands of interconnects. And as the ...
A Reuters report yesterday claims that Intel is struggling with poor yields on its next-generation 18A manufacturing process, and the state of the manufacturing chain is bad enough, allegedly, that it ...
COLORADO SPRINGS, Colo. – July 15, 2025 – Pushing the boundaries of in-orbit data storage, Frontgrade Technologies, the leading provider of high-reliability microelectronics for space and national ...
Understanding how dislocations (line defects in the crystal structure) occur when 3D-printing metals has been unclear to materials scientists. Understanding when and how dislocations form in ...
Perovskite solar cells (PSCs) offer high efficiency and low fabrication costs, making them strong candidates for next-generation photovoltaic technology. Printing techniques have become the preferred ...
TL;DR: TSMC's advanced 2nm process node, featuring GAAFET architecture, matches 5nm defect density and surpasses 3nm and 7nm stages. Mass production is set for Q4 2025, powering AMD's EPYC Venice, ...