A new technical paper titled “EEsizer: LLM-Based AI Agent for Sizing of Analog and Mixed Signal Circuit” was published by researchers at The University of Edinburgh. “The design of Analog and ...
Liam Devlin and Andy Dearn describe the design of a 25W X-band gallium nitride (GaN) power amplifier. Gallium nitride (GaN) technology is very well suited to the realisation of solid-state microwave ...
[Paulo] just tipped us about an Excel based high frequency transistor amplifier calculator he made. We’re guessing that some of our readers already are familiar with these class A amplifiers, commonly ...
Op Amps Developed Using TI's New 36-V Bipolar SiGe Process.The reduction in transistor size is made possible by using silicon-on-insulator (SOI) technology. The minimum NPN transistor is up to 11 ...
The first step in designing a microwave frequency power amplifier monolithic microwave integrated circuit on a given GaN foundry process is to select the transistor size and bias, writes Liam Devlin.
San Francisco, CA. Qorvo at IMS 2016 highlighted several new products and features. The company debuted six new 50-V GaN transistors and said that its QPD1000 15-W GaN on SiC wideband input-matched ...
Immediately, I learned that the common base configuration gain was 6db lower than the common emitter. This blew my mind. Then I started checking input resistance and was shocked at how low it measured ...
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