The 48th International Electron Devices Meeting, planned for Dec. 8-11 in San Francisco, may signal some new directions in semiconductors, as the industry shifts to a “postplanar” era of FinFETs and ...
Austin, Texas – With high-k dielectrics apparently delayed beyond the 45-nanometer node, this year's International Electron Devices Meeting will focus on second-generation strained-silicon techniques ...
Imec recently unveiled strained Germanium devices based on a silicon-replacement process, a first according to the research center. The process involves growing a Ge/SiGe quantum-well heterostructure ...
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