OMRON Electronic Components Europe has introduced a new range of G3VM MOSFET relays designed to deliver faster switching performance in an exceptionally small footprint, targeting advanced test and ...
High-reliability rad hard MOSFETs undergo extensive screening and quality conformance testing to ensure that devices perform to specification in the harshest environments. For Defense Logistics Agency ...
OMRON Electronic Components Europe has introduced new G3VH SiC-MOSFET relays with voltage ratings of 3,300V and 1,800V, ...
The T-type circuit structure consists of three MOS FET relays that help reduce the leakage current to a minimal level without affecting the test equipment's inspection accuracy, allowing ...
Toshiba Starts Shipping Test Samples of 1200V Trench-Gate SiC MOSFET that will Enhance Efficiency in Next-Generation AI Data Centers Toshiba Electronic Devices & Storage Corporation ("Toshiba") today ...
Metal Oxide Silicon Field Effect Transistors (MOSFETs), Insulated Gate Bipolar Transistors (IGBTs), Bipolar Junction Transistors (BJTs), diodes, and application specific multi-transistor packaged ...
Designers that rely on Single-pulse Avalanche energy, EAS, alone for an application can be in for a surprise. This article will demystify this relatively unknown parameter that sheds light on the ...