The Renesas RAJ2930004AGM gate driver IC drives 1200-V IGBTs and SiC MOSFETs for electric vehicle (EV) inverters, while providing 3.75-kV RMS isolation. In addition, the driver IC delivers strong ...
Designed specifically for high-voltage sensing, a new generation of optically isolated amplifiers make monitoring and system protection circuits more accurate and easier to design. These iso-amps can ...
TOKYO--(BUSINESS WIRE)--Toshiba Corporation's (TOKYO:6502) Storage & Electronic Devices Solutions Company today announced the launch of "TB9150FNG," an opto-isolated IGBT [1] gate pre-driver IC with ...
Members can download this article in PDF format. Traction inverters based on silicon insulated-gate bipolar transistors (IGBTs) have been the go-to technology for electric vehicles (EVs). However, to ...
Infineon has added five isolated gate drivers to its EiceDriver family optimized for driving IGBTs and SiC MOSFETs. AEC-qualified and ISO 26262-compliant, these third-generation drivers are ...
TOKYO--(BUSINESS WIRE)--Renesas Electronics Corporation (TSE: 6723), a premier supplier of advanced semiconductor solutions, today announced a new gate driver IC that is designed to drive high-voltage ...
Case study examines a common PV inverter failure that can drive uncommon issues in the field — namely, damage to the AC protection equipment from DC fault currents for short periods during transformer ...
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