An effective power circuit consists of more than just stationary components like SiC and GaN MOSFETs. The gate driver, an autonomous component, precedes the electronic switches and guarantees optimal ...
All power circuits primarily use switching devices made of silicon carbide and gallium nitride. Although such devices produce superior working speeds, high voltages, processed currents, and low power ...
CISSOID unveils its 2nd generation of HADES®, the high-reliability, high voltage isolated gate driver chipset. HADES® drives both high efficiency Silicon Carbide (SiC) and traditional silicon power ...
If you are going to use a silicon carbide (SiC) MOSFET (Metal-Oxide-Semiconductor Field-Effect Transistor) in your next development, you will ask yourself: how do I develop the best gate driver for it ...
When it comes to selecting a high-power switching device for power-conversion applications, your two main choices were the silicon MOSFET or the IGBT. The latest power-circuit designs such as AC-DC ...
The AHV85003/AHV85043 Power-Thru™ isolated gate driver chipset from Allegro MicroSystems expands the company’s silicon ...
Our 1ED44173/5/6 are the new low side gate driver ICs that integrate over-current protection (OCP), FAULT status output and enable function. This high integration level is excellent for the digitally ...
SCALE-2 technology optimizes footprint, improves efficiency, performance and reliability of power inverters and converters to 3300 V SAN JOSE, Calif.--(BUSINESS WIRE)--Power Integrations (Nasdaq: POWI ...
KAWASAKI, Japan--(BUSINESS WIRE)--Toshiba Electronic Devices & Storage Corporation ("Toshiba") has today started to provide engineering samples of a gate driver [1] IC, "TB9084FTG,” for three-phase ...
ROHM provides a comprehensive lineup engineered to improve motor efficiency, enhance functionality, and reduce power consumption across a wide range of applications. Santa Clara, CA and Kyoto Japan, ...
Littelfuse has launched a single-channel isolated gate driver typically capable of delivering ±7A and ±4A at minimum. IX3407B, as it will be known, uses a 2.5kV capacitive isolation barrier (3kV for ...
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