Editor's note: Linear Integrated Systems co-founder, John H. Hall, is an industry veteran who is still hands on when it comes to innovations like the latest JFET, LSK489. Anyone using an electronic ...

The new W-gated Trench MOSFET offers better trade-off between on-resistance and gate-drain capacitance. Mohamed Darwish, Vishay Siliconix, Santa Clara, Calif. Power demands of computing and telecom ...

Two distinct structures have been developed for the enhancement mode of GaN-based high-electron–mobility transistors (HEMTs). These two modes are the metal-insulator–semiconductor (MIS) structure, 2 ...

In logic devices such as finFETs (field-effect transistors), metal gate parasitic capacitance can negatively impact electrical performance. One way to reduce this parasitic capacitance is to optimize ...

The power semiconductor evolution started with germanium and selenium devices that succumbed to silicon types around the 1950s. Broader silicon usage stemmed from its improved physical properties ...

As part of its research into GaN transistor power supplies, the University of Bristol has created the fastest active gate driver ever – 10x quicker than anything reported so far. Active drivers ...

The latest trends in electric vehicle and industrial power systems demand higher voltage operation and greater efficiency, but also greater safety of power system devices, write Vikneswaran ...

One common question asked when considering what gate driver to use for an application is: what is the peak current that a driver can deliver? Peak current is one of the most important parameters in ...