HSINCHU, Taiwan--(BUSINESS WIRE)--Faraday Technology Corporation (TWSE:3035), a leading ASIC design service and IP provider, today announced that it is leveraging Samsung FinFET platforms to extend ...
A new technical paper titled “Investigating Self-Heating Effects in Ferroelectric FinFETs for Reliable In-Memory Computing” was published by researchers at TU Munich, University of Stuttgart and ...
SEOUL, South Korea--(BUSINESS WIRE)--Samsung Electronics Co., Ltd., a world leader in advanced semiconductor technology, today announced the newest member of its Exynos family of application ...
A key approach for designing transistors below 32 nanometers is a "fin-based" multigate design, or FinFET, in which the conducting channel is wrapped by a thin silicon "fin" forming the body of the ...
A new technical paper titled “Characteristics of a Novel FinFET with Multi-Enhanced Operation Gates (MEOG FinFET)” was published by researchers at Changzhou University. “This study illustrates a type ...
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