Ferroelectric Memory Company has $20 million in funding for sub-7 nanometer FeFET memories. This is energy saving non-volatile memory. They will first have 28nm planar CMOS for consumer applications ...

As data-centric computing and artificial intelligence (AI) technologies spread rapidly, demand is growing for high-capacity, low-power storage devices. But the widely used NAND flash memory has had ...

A technical paper titled “First demonstration of in-memory computing crossbar using multi-level Cell FeFET” was published by researchers at Robert Bosch, University of Stuttgart, Indian Institute of ...

The ferroelectrical properties of materials have found a variety of uses over the years, including in semiconductor applications. Ferroelectric memory is among the most interesting and possibly ...

The part 1 of this two-article series outlined the NAND flash technology and how it transitioned from 2D to 3D NAND flash. The article also explained the current challenges in the way of density ...

A new technical paper titled “Embedding security into ferroelectric FET array via in situ memory operation” was published by researchers at Pennsylvania State University, University of Notre Dame, ...

Samsung’s research division has taken a swing at the long-standing limitations of traditional NAND flash and introduced a prototype design built around ferroelectric field-effect transistors. These ...