A new technical paper titled “Benchmarking of FERAM-Based Memory System by Optimizing Ferroelectric Device Model” was published by researchers at Georgia Tech, imec and National Technical University ...

To allow data storage capacity up to five times greater than the current materials used in Ferroelectric Random Access Memory (FeRAM) production, Fujitsu Microelectronics America Inc. (FMA) and the ...

The Tokyo Institute of Technology, Fujitsu Laboratories, and Fujitsu Limited have jointly developed a new material for non-volatile ferroelectric RAM (FeRAM). The material is a modified composition of ...

Toshiba has developed a higher capacity version of its FeRAM (Ferroelectric RAM) memory that can send and receive data at eight times the speed of its previously detailed prototype. FeRAM is a ...