Semiconductor Engineering

Virtual Exploration Of Novel Vertical DRAM Architectures

Process and device technologies have had to overcome numerous technical challenges as DRAM memory devices have transitioned between different cell architectures. When DRAM technology nodes went beyond ...
TweakTown

NEO Semiconductor's new 3D X-DRAM technology is groundbreaking 3D NAND-like DRAM

NEO Semiconductor has announced that it has developed the "world's first 3D NAND-like DRAM cell array," which aims to increase DRAM chip density using established 3D stacking technology. Designed to ...
Fudzilla

NEO Semiconductor releases 3D NAND-like DRAM cell array

NEO Semiconductor has unveiled its "3D X-DRAM", which it is pitching as the world's first 3D NAND-like DRAM cell array. Based on Neo's estimates, 3D X-DRAM technology can achieve 128 Gb density with ...
Semiconductor Engineering

Improving DRAM Device Performance Through Saddle Fin Process Optimization

As DRAM technology nodes have scaled down, access transistor issues have been highlighted due to weak gate controllability. Saddle Fins with Buried Channel Array Transistors (BCAT) have subsequently ...