1. A research team consisting of NIMS and the Tokyo University of Science has developed the fastest electric double layer transistor using a highly ion conductive ceramic thin film and a diamond thin ...
IBM today will uncork new research to show double-gate transistors are viable and offer enormous promise over single-gate structures now used in semiconductor devices. In several respects, the ...
SUNNYVALE, Calif. — Hoping to beat IBM, Intel, TSMC and others to the punch, Advanced Micro Devices Inc. here today announced it has fabricated the world's smallest double-gate transistors–based on a ...
With double-gate transistors becoming a serious candidate for the 45nm technology node, Freescale Semiconductor and the University of Florida have created what they claim is the first double-gate ...
(Nanowerk News) The National Institute for Advanced Industrial Science and Technology (AIST) and Tohoku University have succeeded in manufacturing a high-performance upright-type double gate MOS ...
A way to electrically modify the chirality of organic–inorganic hybrid materials, in which chiral molecules adsorb onto ...
Several late papers at next week's IEEE Electron Devices Meeting at the Hilton Washington and Towers in Washington, D.C., describe up-to-the-minute innovations from key industry leaders. Researchers ...
After being stuck for what seems like forever on 28nm, we’re finally getting a glimpse of the monsters set to arrive with TSMC’s 16nm process. Code-named Pascal, Nvidia’s top end 16nm GPU is ...
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