Inspection and metrology are becoming more critical in the silicon carbide (SiC) industry amid a pressing need to find problematic defects in current and future SiC devices. Finding defects always has ...

Introducing a vertical arrangement of n and p layers into the drift layer of semiconductors to enable bipolar operation is a way around the 'unipolar limit' problem in semiconductors. But defect ...

SiC is extensively used in microelectronic devices owing to its several unique properties. However, low yield and high cost of the SiC manufacturing process are the major challenges that must be ...

Silicon carbide mosfets and Schottky diodes are both subject to the unipolar limit – the trade-off between breakdown voltage and specific resistance of the drift layer. Super-junction transistors ...

The electrification of vehicles is fueling demand for silicon carbide power ICs, but it also is creating challenges in finding and identifying defects in those chips. Coinciding with this is a growing ...

Phase contrast imaging (PCI) based on using synchrotron X-rays is an ideal method to visualize internal microstructure of various materials, in particular, of semiconductor materials. PCI spatial ...

Despite silicon carbide’s (SiC) promise over conventional silicon for the design of next-generation power electronics devices, broad adoption of this high-performance compound semiconductor has been ...

To improve the performance of SiC, numerous studies of the formation and the propagation of defects during crystal growth have been carried out. Though the results have resulted in major advancements ...

Semiconductor devices based on Si (silicon) are not limited to data processing applications such as logic and memory devices for computers and communication equipment but are also widely used for ...