Scientists have grown thin films of two different crystalline materials on top of each other using an innovative technique called 'dative epitaxy.' The researchers discovered the method by surprise.
A new technical paper titled “Mitigation of Structural Defects during the Growth of 2D van der Waals Chalcogenides by Molecular Beam Epitaxy” was published by researchers at Penn State University.
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Once considered quality problems, substrate defects now enable precise control of semiconductor crystal growth
A team led by researchers at Rensselaer Polytechnic Institute (RPI) has made a breakthrough in semiconductor development that could reshape the way we produce computer chips, optoelectronics and ...
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