Nature

Silicon-Germanium Heterojunction Bipolar Transistors and On-Wafer Measurement Techniques

Silicon-Germanium Heterojunction Bipolar Transistors (SiGe HBTs) have emerged as a cornerstone in high-frequency electronics owing to their enhanced carrier mobility and reduced noise. The integration ...
EDN

IBM builds SiGe bipolar transistor on thin-SOI wafer

TOULOUSE, France — IBM Corp. said Tuesday (September 30, 2003) that it was the first company to build SiGe bipolar transistors on thin silicon-on-insulator wafers, thereby paving the way to build SiGe ...
EDN

Next-Generation Thin Wafer IGBT

Infineon’s TRENCHSTOP5 IGBTs are the next generation of thin wafer IGBT (Insulated Gate Bipolar Transistor) that feature significantly lower conduction and switching losses compared to currently ...
Business Wire

Search For The Next: UK Collaboration Unveils Bizen® a Transistor Wafer Process Technology Promising to Slash Lead Times, Wafer Area and Process Layers While Increasing Speed ...

NOTTINGHAM, England--(BUSINESS WIRE)--A UK collaboration between Nottingham-based start-up, Search For The Next (SFN) and Glenrothes-based Semefab may be set to disrupt the semiconductor industry by ...